
Theoretical study of polarization dependence of carrier-induced refractive index change of quantum dot
Author(s) -
Qingyuan Miao,
Ziyi Yang,
Jianji Dong,
Peng He,
Dexiu Huang
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.002252
Subject(s) - quantum dot , refractive index , polarization (electrochemistry) , materials science , optics , optoelectronics , physics , chemistry
The influences of dot material component, barrier material component, aspect ratio and carrier density on the refractive index changes of TE mode and TM mode of columnar quantum dot are analyzed, and a multiparameter adjustment method is proposed to realize low polarization dependence of refractive index change. Then the quantum dots with low polarization dependence of refractive index change (<1.5%) within C-band (1530 nm - 1565 nm) are designed, and it shows that quantum dots with different material parameters are anticipated to have similar characteristics of low polarization dependence.