Twin-mirror membrane distributed-reflector lasers using 20-μm-long active region on Si substrates | Zendy

Erina Kanno | Zendy; Koji Takeda | Zendy; Takuro Fujii | Zendy; Koichi Hasebe | Zendy; Hidetaka Nishi | Zendy; Tsuyoshi Yamamoto | Zendy; Takaaki Kakitsuka | Zendy; Shinji Matsuo | Zendy

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Twin-mirror membrane distributed-reflector lasers using 20-μm-long active region on Si substrates

Author(s) -

Erina Kanno,

Koji Takeda,

Takuro Fujii,

Koichi Hasebe,

Hidetaka Nishi,

Tsuyoshi Yamamoto,

Takaaki Kakitsuka,

Shinji Matsuo

Publication year - 2018

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.26.001268

Subject(s) - distributed bragg reflector , optics , materials science , lasing threshold , laser , optoelectronics , relative intensity noise , semiconductor laser theory , distributed bragg reflector laser , reflector (photography) , slope efficiency , distributed feedback laser , modulation (music) , wavelength , fiber laser , physics , light source , acoustics

We demonstrate 20-μm-long twin-mirror membrane distributed-reflector (DR) lasers for chip-to-chip optical interconnects. The lasers employ distributed Bragg reflectors (DBRs) at both ends of a 20-μm-long λ/4-phase shifted distributed feedback (DFB) section. We achieve single-mode lasing in a λ/4-phase shifted DFB mode at room temperature with a threshold current of 0.39 mA. The lasing wavelength remains stable while the injected current is varied, and it is determined by the λ/4 phase-shifted DFB. The modulation current efficiency is 11.4 GHz/mA 1/2 , which is measured by using relative intensity noise spectra. We also demonstrate the direct modulation of the DR lasers at a bit rate of 25.8 Gbit/s with an energy cost of 163 fJ/bit.

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