Open AccessTwin-mirror membrane distributed-reflector lasers using 20-μm-long active region on Si substrates
Author(s) -
Erina Kanno,
Koji Takeda,
T. Fujii,
Koichi Hasebe,
Hidetaka Nishi,
Tsuyoshi Yamamoto,
Takaaki Kakitsuka,
Shinji Matsuo
Publication year - 2018
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.001268
Subject(s) - distributed bragg reflector , optics , materials science , lasing threshold , laser , optoelectronics , relative intensity noise , semiconductor laser theory , distributed bragg reflector laser , reflector (photography) , distributed feedback laser , modulation (music) , slope efficiency , wavelength , fiber laser , physics , light source , acoustics
We demonstrate 20-μm-long twin-mirror membrane distributed-reflector (DR) lasers for chip-to-chip optical interconnects. The lasers employ distributed Bragg reflectors (DBRs) at both ends of a 20-μm-long λ/4-phase shifted distributed feedback (DFB) section. We achieve single-mode lasing in a λ/4-phase shifted DFB mode at room temperature with a threshold current of 0.39 mA. The lasing wavelength remains stable while the injected current is varied, and it is determined by the λ/4 phase-shifted DFB. The modulation current efficiency is 11.4 GHz/mA 1/2 , which is measured by using relative intensity noise spectra. We also demonstrate the direct modulation of the DR lasers at a bit rate of 25.8 Gbit/s with an energy cost of 163 fJ/bit.