Open AccessIntegration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)
Author(s) -
Akash Kumar,
Shuh-Ying Lee,
Sachin Yadav,
Kang Hai Tan,
Wan Khai Loke,
Yuan Dong,
Kwang Hong Lee,
Satrio Wicaksono,
Gengchiau Liang,
S. F. Yoon,
D.A. Antoniadis,
Yee-Chia Yeo,
Xiao Gong
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.031853
Subject(s) - optoelectronics , materials science , lasing threshold , laser , molecular beam epitaxy , indium gallium arsenide , substrate (aquarium) , quantum well , transistor , gallium arsenide , electronic circuit , silicon , integrated circuit , epitaxy , optics , wavelength , nanotechnology , electrical engineering , oceanography , physics , engineering , layer (electronics) , voltage , geology
Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an I ON /I OFF ratio of more than 10 6 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.