Open AccessTunable electromagnetically induced transparency in integrated silicon photonics circuit
Author(s) -
Ang Li,
Wim Bogaerts
Publication year - 2017
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.031688
Subject(s) - electromagnetically induced transparency , slow light , fano resonance , resonator , optics , photonics , extinction ratio , optoelectronics , resonance (particle physics) , bandwidth (computing) , photonic integrated circuit , group delay and phase delay , physics , silicon photonics , silicon , materials science , photonic crystal , plasmon , telecommunications , computer science , wavelength , particle physics
We comprehensively simulate and experimentally demonstrate a novel approach to generate tunable electromagnetically induced transparency (EIT) in a fully integrated silicon photonics circuit. It can also generate tunable fast and slow light. The circuit is a single ring resonator with two integrated tunable reflectors inside, which form an embedded Fabry-Perot (FP) cavity inside the ring cavity. The mode of the FP cavity can be controlled by tuning the reflections using integrated thermo-optic tuners. Under correct tuning conditions, the interaction of the FP mode and the ring resonance mode will generate a Fano resonance and an EIT response. The extinction ratio and bandwidth of the EIT can be tuned by controlling the reflectors. Measured group delay proves that both fast light and slow light can be generated under different tuning conditions. A maximum group delay of 1100 ps is observed because of EIT. Pulse advance around 1200 ps is also demonstrated.