Ultraviolet photodetector using pn junction formed by transferrable hollow n-TiO_2 nano-spheres monolayer

We report an ultraviolet (UV) photodetector with a universally transferable monolayer film with ordered hollow TiO 2 spheres on p-GaN. After forming a TiO 2 monolayer film by unidirectional rubbing of hollow TiO 2 spheres on a polydimethylsiloxane (PDMS) supporting plate, we used a 5% polyvinyl alcohol (PVA) aqueous solution to transfer the film onto the target substrate. The PVA/TiO 2 monolayer film was detached from the PDMS film and transferred to the p-GaN/Al 2 O 3 substrate. To investigate the effects of crystallized phases of the TiO 2 hollow spheres, anatase and rutile TiO 2 sphere monolayers prepared by combining template synthesis and thermal treatment. The responsiveness of the UV photodetectors using anatase and rutile hollow n-TiO 2 monolayer/p-GaN was 0.203 A/W at 312 nm and 0.093 A/W at 327 nm, respectively.