Open AccessDirect evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN
Author(s) -
Xiaoxiao Sun,
Xinqiang Wang,
Ping Wang,
Tao Wang,
Bowen Sheng,
Xiantong Zheng,
Mo Li,
Jian Zhang,
Xuelin Yang,
Fujun Xu,
Weikun Ge,
Bo Shen
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.030664
Subject(s) - cathodoluminescence , luminescence , materials science , nanowire , electron , optoelectronics , impurity , spontaneous emission , recombination , spectroscopy , photon , emission spectrum , optics , laser , physics , spectral line , chemistry , biochemistry , quantum mechanics , astronomy , gene
Intense emission from an InGaN quantum disc (QDisc) embedded in a GaN nanowire p-n junction is directly resolved by performing cathodoluminescence spectroscopy. The luminescence observed from the p-type GaN region is exclusively dominated by the emission at 380 nm, which has been usually reported as the emission from Mg induced impurity bands. Here, we confirm that the robust emission from 380 nm is actually not due to the Mg induced impurity bands, but rather due to being the recombination between electrons in the QDisc and holes in the p-type GaN. This identification helps to get a better understanding of the confused luminescence from nanowires with thin QDiscs embedded for fabricating electrically driven single photon emitters.