Open AccessInP-based photonic integrated circuit platform on SiC wafer
Author(s) -
Mitsuru Takenaka,
Shinichi Takagi
Publication year - 2017
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.029993
Subject(s) - materials science , wafer , optoelectronics , cladding (metalworking) , heat sink , wafer bonding , photonic integrated circuit , photonics , thermal conductivity , semiconductor laser theory , semiconductor , refractive index , diode , waveguide , optics , laser , composite material , electrical engineering , physics , engineering
We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.