Open AccessMultilayer graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide
Author(s) -
Meiyong Fan,
Huimin Yang,
Pengfei Zheng,
Guohua Hu,
Yiping Cui
Publication year - 2017
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.021619
Subject(s) - materials science , graphene , extinction ratio , optoelectronics , optical modulator , waveguide , optics , silicon , silicon nitride , absorption (acoustics) , modulation (music) , electro absorption modulator , figure of merit , phase modulation , semiconductor , nanotechnology , semiconductor laser theory , philosophy , aesthetics , wavelength , quantum dot laser , physics , phase noise , composite material
A graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide is proposed and analyzed. By embedding four graphene layers in the double-stripe silicon nitride waveguide and the graphene layers co-electrode design, the total metal-graphene contact resistance can be reduced 50% and as high as 30.6GHz modulation bandwidth can be achieved theoretically. The calculated extinction ratio and figure of merit are 0.1658dB/um and 9.7, respectively. And the required switching voltage from its minimum to maximum absorption state is 3.8180V and 780.50fJ/bit power consuming can be achieved. The proposed modulator can remedy the lack of high speed modulator on the passive silicon nitride waveguide.