Open AccessIntegrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction
Author(s) -
L. Virot,
Daniel Benedikovič,
Bertrand Szelag,
Carlos AlonsoRamos,
Bayram Karakus,
JeanMichel Hartmann,
Xavier Le Roux,
P. Crozat,
Éric Cassan,
Delphine MarrisMorini,
Charles Baudot,
F. Bœuf,
Jean-Marc Fédéli,
Christophe Kopp,
Laurent Vivien
Publication year - 2017
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.019487
Subject(s) - photodiode , responsivity , optoelectronics , materials science , silicon photonics , silicon , photodetector , fabrication , photonics , heterojunction , silicon on insulator , waveguide , germanium , optics , photonic integrated circuit , hybrid silicon laser , physics , medicine , alternative medicine , pathology
Germanium photodetectors are considered to be mature components in the silicon photonics device library. They are critical for applications in sensing, communications, or optical interconnects. In this work, we report on design, fabrication, and experimental demonstration of an integrated waveguide PIN photodiode architecture that calls upon lateral double Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions. This photodiode configuration takes advantage of the compatibility with contact process steps of silicon modulators, yielding reduced fabrication complexity for transmitters and offering high-performance optical characteristics, viable for high-speed and efficient operation near 1.55 μm wavelengths. More specifically, we experimentally obtained at a reverse voltage of 1V a dark current lower than 10 nA, a responsivity higher than 1.1 A/W, and a 3 dB opto-electrical cut-off frequency over 50 GHz. The combined benefits of decreased process complexity and high-performance device operation pave the way towards attractive integration strategies to deploy cost-effective photonic transceivers on silicon-on-insulator substrates.