Open AccessWhispering gallery mode lasing from InGaN/GaN quantum well microtube
Author(s) -
Yufeng Li,
Lishuang Feng,
Xilin Su,
Qiang Li,
Feng Yun,
Yigong Gao,
Jung Han
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.018072
Subject(s) - whispering gallery wave , lasing threshold , materials science , whispering gallery , photoluminescence , optoelectronics , quantum well , heterojunction , optics , polarization (electrochemistry) , resonance (particle physics) , gallium nitride , laser , nanotechnology , resonator , physics , wavelength , chemistry , particle physics , layer (electronics)
In this work, we have successfully fabricated microtubes by strain-induced self-rolling of a InGaN/GaN quantum wells nanomembrane. Freestanding quantum wells microtubes, with a diameter of 6 µm and wall thickness of 50 nm, are formed when the coherently strained InGaN/GaN quantum wells heterostructure is selectively released from the hosting substrate. Periodic oscillations due to whispering-gallery modes resonance were found superimposed on photoluminescence spectra even at low optical excitation power. With increasing pumping power density, the microtube is characterized by a stimulated emission with a threshold as low as 415 kW/cm 2 . Such emission shows predominant TM polarization parallel to the microtube axis.