Open AccessInAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off
Author(s) -
Ho Sung Kim,
Seung Yeop Ahn,
Sang Hyeon Kim,
Geun Hwan Ryu,
Jihoon Kyhm,
Kyung Woon Lee,
Jung Ho Park,
Won Jun Choi
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.017562
Subject(s) - materials science , responsivity , optoelectronics , epitaxy , wafer , quantum dot , photoluminescence , infrared , wafer bonding , silicon , photodetector , substrate (aquarium) , optics , layer (electronics) , nanotechnology , oceanography , physics , geology
We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W.