Open AccessSemipolar III-nitride laser diodes with zinc oxide cladding
Author(s) -
A. Myzaferi,
Arthur H. Reading,
Robert M. Farrell,
Daniel Cohen,
Shuji Nakamura,
Steven P. DenBaars
Publication year - 2017
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.016922
Subject(s) - materials science , nitride , cladding (metalworking) , optoelectronics , lasing threshold , diode , laser , oxide , light emitting diode , optics , layer (electronics) , composite material , metallurgy , wavelength , physics
Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.