Open AccessElectrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer
Author(s) -
N. V. Kryzhanovskaya,
E. I. Moiseev,
Yu. S. Polubavkina,
M. V. Maximov,
M. M. Kulagina,
S. I. Troshkov,
Yu. M. Zadiranov,
A. A. Lipovskii,
N. V. Baidus,
A. A. Dubinov,
Z. F. Krasilnik,
А. В. Новиков,
Д. А. Павлов,
А. В. Рыков,
A. A. Sushkov,
D. V. Yurasov,
A. E. Zhukov
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.016754
Subject(s) - lasing threshold , materials science , optoelectronics , laser linewidth , laser , quantum well , substrate (aquarium) , epitaxy , silicon , gallium arsenide , semiconductor laser theory , metalorganic vapour phase epitaxy , indium gallium arsenide , quantum dot laser , optics , semiconductor , wavelength , nanotechnology , physics , oceanography , layer (electronics) , geology
In this work we report, to the best of our knowledge, the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD on silicon with an intermediate MBE-grown Ge buffer. Microlasers with an InGaAs/GaAs quantum well active region were tested at room temperature. Under pulsed injection, lasing is achieved in microlasers with diameters of 23, 27, and 31 µm with a minimal threshold current density of 28 kA/cm 2 . Lasing spectrum is predominantly single-mode with a dominant mode linewidth as narrow as 35 pm.