On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes | Zendy

ZiHui Zhang | Zendy; Luping Li | Zendy; Yonghui Zhang | Zendy; Fujun Xu | Zendy; Qiang Shi | Zendy; Bo Shen | Zendy; Wengang Bi | Zendy

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On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes

Author(s) -

ZiHui Zhang,

Luping Li,

Yonghui Zhang,

Fujun Xu,

Qiang Shi,

Bo Shen,

Wengang Bi

Publication year - 2017

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.25.016550

Subject(s) - electric field , light emitting diode , ultraviolet , optoelectronics , thermionic emission , materials science , nitride , quantum efficiency , diode , optics , quantum well , gallium nitride , drift velocity , layer (electronics) , wide bandgap semiconductor , physics , electron , laser , composite material , quantum mechanics

The drift velocity for holes is strongly influenced by the electric field in the p-type hole injection layer for III-nitride based deep ultraviolet light-emitting diodes (DUV LEDs). In this work, we propose an electric-field reservoir (EFR) consisting of a p-Al x Ga 1-x N/p-GaN architecture to facilitate the hole injection and improve the internal quantum efficiency (IQE). The p-Al x Ga 1-x N layer in the EFR can well reserve the electric field that can moderately adjust the drift velocity and the kinetic energy for holes. As a result, we are able to enhance the thermionic emission for holes to cross over the p-EBL with a high Al composition provided that the composition in the p-Al x Ga 1-x N layer is properly optimized to avoid a complete hole depletion therein.

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