Open AccessSingle photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode
Author(s) -
Nicholas Martinez,
Michael Gehl,
Christopher T. DeRose,
Andrew Starbuck,
Andrew Pomerene,
Anthony L. Lentine,
Douglas C. Trotter,
Paul Davids
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.016130
Subject(s) - avalanche photodiode , optics , waveguide , optoelectronics , photodiode , dark current , single photon avalanche diode , materials science , avalanche diode , photonics , photodetector , photon , photon counting , detector , jitter , physics , breakdown voltage , voltage , telecommunications , quantum mechanics , computer science
We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.