Open AccessAg nanoparticles modified large area monolayer MoS_2 phototransistors with high responsivity
Author(s) -
Wenkui Jing,
Nan Ding,
Luying Li,
Fan Jiang,
Xiaoli Xiong,
Nishuang Liu,
Tianyou Zhai,
Yuan Gao
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.014565
Subject(s) - responsivity , materials science , monolayer , optoelectronics , surface plasmon resonance , photodiode , nanoparticle , band gap , ultraviolet , photodetector , nanotechnology
Monolayer MoS 2 is considered to be one of the best candidates for next generation electronics because of its ultra-thin body and direct band gap. However, MoS 2 based transistors have relatively low photoresponsivity, field effect mobility and narrow response spectrum range, which hinder the application of MoS 2 in optoelectronic devices. Here, based on the enhancement of localized surface plasmon resonance (LSPR), a simple method of depositing Ag nanoparticles on the MoS 2 surface is used. By adjusting the size of Ag nanoparticles, the response spectral range of phototransistor is broadened from red to near ultra-violet. The photoresponsivity gains an increase of 470% up to 2.97 × 10 4 A W -1 at 610 nm, and the response time also shows a decrease to some extent. The enhanced responsivity is comparable to those of devices encapsulated with high-quality dielectrics, and superior over other reported monolayer MoS 2 in ambient conditions. The high responsivity and working current enables a wide range of device applications. This work provides a viable route towards performance enhancement of two-dimensional phototransistors.