Open AccessRoom temperature continuous wave quantum dot cascade laser emitting at 72 μm
Author(s) -
Ning Zhuo,
Jin-Chuan Zhang,
Fengjiao Wang,
Yinghui Liu,
Shenqiang Zhai,
Yue Zhao,
Dongbo Wang,
Zhiwei Jia,
Yuhong Zhou,
Lijun Wang,
Junqi Liu,
Shuman Liu,
Fengqi Liu,
Zhanguo Wang,
Jacob B. Khurgin,
Greg Sun
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.013807
Subject(s) - lasing threshold , cascade , quantum dot , materials science , quantum cascade laser , laser , continuous wave , optoelectronics , quantum dot laser , wavelength , optics , semiconductor laser theory , gallium arsenide , physics , chemistry , chromatography
We demonstrate a quantum cascade laser with active regions consisting of InAs quantum dots deposited on GaAs buffer layers that are embedded in InGaAs wells confined by InAlAs barriers. Continuous wave room temperature lasing at the wavelength of 7.2 μm has been demonstrated with the threshold current density as low as 1.89 kA/cm 2 , while in pulsed operational mode lasing at temperatures as high as 110 °C had been observed. A phenomenological theory explaining the improved performance due to weak localization of states had been formulated.