Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band | Zendy

Diego PérezGalacho | Zendy; Charles Baudot | Zendy; Tifenn Hirtzlin | Zendy; Sonia Messaoudène | Zendy; Nathalie Vulliet | Zendy; P. Crozat | Zendy; F. Bœuf | Zendy; Laurent Vivien | Zendy; Delphine MarrisMorini | Zendy

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Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band

Author(s) -

Diego PérezGalacho,

Charles Baudot,

Tifenn Hirtzlin,

Sonia Messaoudène,

Nathalie Vulliet,

P. Crozat,

F. Bœuf,

Laurent Vivien,

Delphine MarrisMorini

Publication year - 2017

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.25.011217

Subject(s) - extinction ratio , materials science , optics , electro optic modulator , modulation (music) , silicon , optoelectronics , voltage , insertion loss , bicmos , mach–zehnder interferometer , optical modulator , phase modulation , physics , interferometry , wavelength , transistor , phase noise , acoustics , quantum mechanics

In this work, a 25 Gb ps silicon push-pull Mach-Zehnder modulator operating in the O-Band (1260 nm - 1360 nm) of optical communications and fabricated on a 300 mm platform is presented. The measured modulation efficiency (VπLπ) was comprised between 0.95 V cm and 1.15 V cm, which is comparable to the state-of-the-art modulators in the C-Band, that enabled its use with a driving voltage of 3.3 V pp , compatible with BiCMOS technology. An extinction ratio of 5 dB and an on-chip insertion losses of 3.6 dB were then demonstrated at 25 Gb ps.

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