Open AccessLow voltage 25Gbps silicon Mach-Zehnder modulator in the O-band
Author(s) -
Diego Pérez-Galacho,
Charles Baudot,
Tifenn Hirtzlin,
S. Messaoudène,
N. Vulliet,
P. Crozat,
F. Bœuf,
Laurent Vivien,
Delphine MarrisMorini
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.011217
Subject(s) - extinction ratio , materials science , optics , electro optic modulator , modulation (music) , silicon , optoelectronics , voltage , insertion loss , bicmos , mach–zehnder interferometer , optical modulator , phase modulation , physics , interferometry , wavelength , transistor , phase noise , acoustics , quantum mechanics
In this work, a 25 Gb ps silicon push-pull Mach-Zehnder modulator operating in the O-Band (1260 nm - 1360 nm) of optical communications and fabricated on a 300 mm platform is presented. The measured modulation efficiency (VπLπ) was comprised between 0.95 V cm and 1.15 V cm, which is comparable to the state-of-the-art modulators in the C-Band, that enabled its use with a driving voltage of 3.3 V pp , compatible with BiCMOS technology. An extinction ratio of 5 dB and an on-chip insertion losses of 3.6 dB were then demonstrated at 25 Gb ps.