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Design and analysis of electro-absorption modulators with uniaxially stressed Ge/SiGe multiple quantum wells
Author(s) -
Jianfeng Gao,
Junqiang Sun,
Jialin Jiang,
Heng Zhou,
Yang Zhou
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.010874
Subject(s) - materials science , absorption (acoustics) , optoelectronics , optics , ultimate tensile strength , quantum well , wavelength , excited state , laser , composite material , physics , nuclear physics
We propose and analyze theoretically electro-absorption modulators with uniaxially tensile strained Ge/Si0.19Ge0.81 multiple quantum wells (MQWs). The effects of uniaxial strain on band structures including Γ-valley and L-valley are discussed. The simulation results indicate that the absorption contrast of TE mode is improved by 3.1 dB while the TM mode absorption is reduced by two-thirds under 1.6% uniaxial tensile strain. Zero-biased electro-absorption modulators covering 1380-1550 nm wavelength can be achieved by introducing 0.18%-1.6% uniaxial tensile strain. Taking into account the TE-polarized mode excited usually in integrated waveguides, the proposed scheme provides a promising approach to design highly efficient Ge/SiGe MQWs electro-absorption modulators for on-chip optical transmission and cross-connect applications.

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