Open AccessEnhanced light absorption in waveguide Schottky photodetector integrated with ultrathin metal/silicide stripe
Author(s) -
Jingshu Guo,
Zhiwei Wu,
Yanli Zhao
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.010057
Subject(s) - responsivity , materials science , photodetector , optoelectronics , dark current , absorptance , optics , quantum efficiency , absorption (acoustics) , schottky barrier , reflectivity , physics , diode , composite material
We investigate the light absorption enhancement in waveguide Schottky photodetector integrated with ultrathin metal/silicide stripe, which can provide high internal quantum efficiency. By using aab0-quasi-TE hybrid modes for the first time, a high absorptance of 95.6% is achieved in 5 nm thick Au stripe with area of only 0.14 μm 2 , without using resonance structure. In theory, the responsivity, dark current, and 3dB bandwidth of the corresponding device are 0.146 A/W, 8.03 nA, and 88 GHz, respectively. For most silicides, the quasi-TM mode should be used in this device, and an optimized PtSi device has a responsivity of 0.71 A/W and a dark current of 35.9 μA.