Open AccessDesign and analysis of a CMOS-compatible distributed Bragg reflector laser based on highly uniaxial tensile stressed germanium
Author(s) -
Jialin Jiang,
Junqiang Sun,
Yang Zhou,
Jianfeng Gao,
Heng Zhou,
Ruiwen Zhang
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.006497
Subject(s) - materials science , optoelectronics , laser , germanium , distributed bragg reflector , optics , resonator , quantum efficiency , heterojunction , silicon , physics , wavelength
We design a CMOS-compatible Distributed Bragg Reflector (DBR) laser based on highly uniaxial tensile stressed germanium. Our design first incorporates three critical elements including high uniaxial tensile stress, low loss optical resonator and heterojunction for electrical injection. A threshold current density of 80 kA/cm 2 and an internal quantum efficiency of 8.5% are estimated when the Shockley-Reed-Hall (SRH) lifetime is chosen to be 3 ns. Furthermore, the performance of the DBR laser can be enhanced by improving the crystal quality and carefully designing the p-n junction. The simulation results also indicate that the limitation of the improvement of threshold current density and internal quantum efficiency are 29 kA/cm 2 and 19.6%, resulting from the Auger recombination. The influences of strain and n-type doping on the threshold current density and the internal quantum efficiency are discussed. The proposed DBR laser offers a new approach to realize on-chip light source for silicon photonics.