Open AccessSelf-aligned nanoislands nanobeam bandedge lasers
Author(s) -
Putu E. Pramudita,
Hoon Jang,
Indra Karnadi,
Hwi-Min Kim,
Jun Young Lee
Publication year - 2017
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.006311
Subject(s) - materials science , laser , optoelectronics , etching (microfabrication) , quantum well , optics , dielectric , gallium arsenide , semiconductor laser theory , nanotechnology , semiconductor , physics , layer (electronics)
We propose and demonstrate a novel one-dimensional nanobeam bandedge laser constituted by self-aligned nanoisland quantum-well (QW) structures. The formation of self-aligned InGaAsP nanoislands sandwiched between two InP claddings is the result of selective removal of QW through wet-etching processes. By controlling wet-etching time, we show a good spatial and spectral overlap between the dielectric mode and the self-aligned nanoisland structures leads to the realization of nanobeam bandedge lasers with low-threshold operations and high slope efficiencies. Optical characterization results indicate a strong correlation between the size of individual nanoisland and the threshold power of our nanobeam bandedge lasers. We obtain an approximately 81% reduction in the absorbed threshold power as we optimize the size of the nanoislands.