Open AccessFlip-chip integrated silicon Mach-Zehnder modulator with a 28nm fully depleted silicon-on-insulator CMOS driver
Author(s) -
Zheng Yong,
Stefan Shopov,
Jared C. Mikkelsen,
R. E. Mallard,
Jason C. C. Mak,
S.P. Voinigescu,
Joyce K. S. Poon
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.006112
Subject(s) - extinction ratio , silicon on insulator , cmos , electro optic modulator , materials science , silicon , optoelectronics , optics , insertion loss , transmitter , mach–zehnder interferometer , silicon photonics , optical modulator , electrical engineering , physics , interferometry , engineering , wavelength , phase modulation , channel (broadcasting) , phase noise
We present a silicon electro-optic transmitter consisting of a 28nm ultra-thin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) CMOS driver flip-chip integrated onto a Mach-Zehnder modulator. The Mach-Zehnder silicon optical modulator was optimized to have a 3dB bandwidth of around 25 GHz at -1V bias and a 50 Ω impedance. The UTBB FD-SOI CMOS driver provided a large output voltage swing around 5 V pp to enable a high dynamic extinction ratio and a low device insertion loss. At 44 Gbps, the transmitter achieved a high extinction ratio of 6.4 dB at the modulator quadrature operation point. This result shows open eye diagrams at the highest bit rates and with the largest extinction ratios for silicon electro-optic transmitter using a CMOS driver.