Open AccessMonolithic integration of InGaAs n-FETs and lasers on Ge substrate
Author(s) -
Akash Kumar,
Shuh-Ying Lee,
Sachin Yadav,
Kang Hai Tan,
Wan Khai Loke,
Satrio Wicaksono,
Daosheng Li,
Saeid MasudyPanah,
Gengchiau Liang,
S. F. Yoon,
Xiao Gong,
D.A. Antoniadis,
Yee-Chia Yeo
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.005146
Subject(s) - optoelectronics , materials science , laser , lasing threshold , indium gallium arsenide , laser linewidth , quantum well , molecular beam epitaxy , epitaxy , gallium arsenide , optics , wavelength , nanotechnology , layer (electronics) , physics
We report the first monolithic integration of InGaAs channel field-effect transistors with InGaAs/GaAs multiple quantum wells (MQWs) lasers on a common platform, achieving a milestone in the path of enabling low power and high speed opto-electronic integrated circuits (OEICs). The III-V layers used for realizing transistors and lasers were grown epitaxially on the Ge substrate using molecular beam epitaxy (MBE). A Si-CMOS compatible process was developed to realize InGaAs n-FETs with subthreshold swing SS of 93 mV/decade, I ON /I OFF ratio of more than 4 orders of magnitude with very low off-state leakage current, and a peak effective mobility of more than 2000 cm 2 /V·s. In addition, fabrication process uses a low overall processing temperature (≤ 400 °C) to maintain the high quality of the InGaAs/GaAs MQWs for the laser. Room temperature electrically-pumped lasers with a lasing wavelength of 1.03 µm and a linewidth of less than 1.7 nm were realized.