Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes | Zendy

Serdal Okur | Zendy; Mohsen Nami | Zendy; Ashwin K. Rishinaramangalam | Zendy; Sang Ho Oh | Zendy; Steven P. DenBaars | Zendy; Sheng Liu | Zendy; Igal Brener | Zendy; Daniel Feezell | Zendy

Open Access

Internal quantum efficiency and carrier dynamics in semipolar (20<span style="text-decoration: overline">21</span>) InGaN/GaN light-emitting diodes

Author(s) -

Serdal Okur,

Mohsen Nami,

Ashwin K. Rishinaramangalam,

Sang Ho Oh,

Steven P. DenBaars,

Sheng Liu,

Igal Brener,

Daniel Feezell

Publication year - 2017

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.25.002178

Subject(s) - light emitting diode , optoelectronics , quantum well , materials science , photoluminescence , quantum efficiency , diode , brightness , optics , radiative transfer , physics , laser

The internal quantum efficiencies (IQE) and carrier lifetimes of semipolar (202¯1¯) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar (202¯1¯) LEDs.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research