Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region | Zendy

Aiqin Tian | Zendy; Jianping Liu | Zendy; Liqun Zhang | Zendy; ZengCheng Li | Zendy; Masao Ikeda | Zendy; Shuming Zhang | Zendy; Deyao Li | Zendy; Pengyan Wen | Zendy; Feng Zhang | Zendy; Yang Cheng | Zendy; Xiaowang Fan | Zendy; Hui Yang | Zendy

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Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region

Author(s) -

Aiqin Tian,

Jianping Liu,

Liqun Zhang,

ZengCheng Li,

Masao Ikeda,

Shuming Zhang,

Deyao Li,

Pengyan Wen,

Feng Zhang,

Yang Cheng,

Xiaowang Fan,

Hui Yang

Publication year - 2017

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.25.000415

Subject(s) - materials science , optoelectronics , quantum well , indium gallium nitride , light emitting diode , diode , indium , current density , laser , green laser , gallium nitride , optics , layer (electronics) , nanotechnology , physics , quantum mechanics

By observing the morphology evolution of green InGaN/GaN quantum well (QW) and studying the catholuminescence (CL) property, we investigate indium-segregation-related defects that are formed at green InGaN/GaN QW interfaces. Meanwhile, we also propose the approach and suggest the mechanism to remove them for green InGaN/GaN QW grown on both GaN templates and free-standing GaN substrates. By engineering the interface of green InGaN/GaN QWs, we have achieved green laser diode (LD) structure with low threshold current density of 1.85 kA cm -2 . The output power of the green LD is 58 mW at a current density of 6 kA cm -2 under continuous-wave operation at room temperature.

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