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Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region
Author(s) -
Aiqin Tian,
Liqun Zhang,
ZengCheng Li,
Masao Ikeda,
Shuming Zhang,
Deyao Li,
Pengyan Wen,
Feng Zhang,
Yong Cheng,
Xiaowang Fan,
Hui Yang
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.000415
Subject(s) - materials science , optoelectronics , quantum well , indium gallium nitride , light emitting diode , diode , indium , current density , laser , green laser , gallium nitride , optics , layer (electronics) , nanotechnology , physics , quantum mechanics
By observing the morphology evolution of green InGaN/GaN quantum well (QW) and studying the catholuminescence (CL) property, we investigate indium-segregation-related defects that are formed at green InGaN/GaN QW interfaces. Meanwhile, we also propose the approach and suggest the mechanism to remove them for green InGaN/GaN QW grown on both GaN templates and free-standing GaN substrates. By engineering the interface of green InGaN/GaN QWs, we have achieved green laser diode (LD) structure with low threshold current density of 1.85 kA cm -2 . The output power of the green LD is 58 mW at a current density of 6 kA cm -2 under continuous-wave operation at room temperature.

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