Open AccessHigh-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots
Author(s) -
Yinli Zhou,
Jian Zhang,
Yongqiang Ning,
Yugang Zeng,
Jianwei Zhang,
Xing Zhang,
Li Qin,
Cunzhu Tong,
Yun Liu,
Lijun Wang
Publication year - 2016
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.029321
Subject(s) - lasing threshold , quantum dot , materials science , optoelectronics , wavelength , electroluminescence , gallium arsenide , fabry–pérot interferometer , excited state , quantum dot laser , optics , indium gallium arsenide , semiconductor laser theory , physics , semiconductor , nanotechnology , atomic physics , layer (electronics)
In this paper, we demonstrate high power, dual-wavelength (dual-λ) lasing stemming from bimodal-sized InGaAs/GaAs quantum dots (QDs). The device exhibits simultaneous dual-λ lasing at 1015.2 nm and 1023.0 nm with total power of 165.6 mW at 700 mA under room temperature continuous wave (CW) mode. Gaussian fitting analyses of the electroluminescence (EL) spectrum attribute the excellent performance to independent carrier transitions from the first excited states of large dot ensemble (LD ES1) and small dot ensemble (SD ES1), respectively. This formation provides a new possibility to achieve high power dual-λ operation only using Fabry-Pérot (FP) cavity, which is significant for compact size and low fabrication cost.