Open AccessNumerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications
Author(s) -
Stefano Dominici,
Hanqing Wen,
Francesco Bertazzi,
Michele Goano,
E. Bellotti
Publication year - 2016
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.026363
Subject(s) - materials science , auger effect , optoelectronics , infrared , semiconductor , wavelength , spontaneous emission , optics , radiative transfer , auger , doping , laser , physics , atomic physics
The Ge 1-x Sn x alloy is a promising material for optoelectronic applications. It offers a tunable wavelength in the infrared (IR) spectrum and high compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, difficulties in growing device quality Ge 1-x Sn x films has left the potentiality of this material unexplored. Recent advances in technological processes have renewed the interest toward this material paving the way to potential applications. In this work, we perform a numerical investigation on absorption coefficient, radiative recombination rate, and Auger recombination properties of intrinsic and doped Ge 1-x Sn x for application in the extended-short wavelength infrared and medium wavelength infrared spectrum ranges. We apply a Green's function based model to the Ge 1-x Sn x full electronic band structure determined through an empirical pseudopotential method and determine the dominant recombination mechanism between radiative and Auger processes over a wide range of injection levels.