Open AccessLow temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy
Author(s) -
Valynn Katrine Mag-usara,
Stefan Funkner,
Gudrun Niehues,
Elizabeth Ann Prieto,
Maria Herminia Balgos,
Armando Somintac,
Elmer Estacio,
Kohji Yamamoto,
Muneaki Hase,
Masahiko Tani
Publication year - 2016
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.026175
Subject(s) - materials science , terahertz radiation , gallium arsenide , carrier lifetime , terahertz time domain spectroscopy , optoelectronics , optics , spectroscopy , optical pumping , semiconductor , terahertz spectroscopy and technology , laser , physics , silicon , quantum mechanics
We present the use of a "double optical pump" technique in terahertz time-domain emission spectroscopy as an alternative method to investigate the lifetime of photo-excited carriers in semiconductors. Compared to the commonly employed optical pump-probe transient photo-reflectance, this non-contact and room temperature characterization technique allows relative ease in achieving optical alignment. The technique was implemented to evaluate the carrier lifetime in low temperature-grown gallium arsenide (LT-GaAs). The carrier lifetime values deduced from "double optical pump" THz emission decay curves show good agreement with data obtained from standard transient photo-reflectance measurements on the same LT-GaAs samples grown at 250 °C and 310 °C.