Open AccessNear-ultraviolet lateral photovoltaic effect in Fe_3O_4/3C-SiC Schottky junctions
Author(s) -
Bin Song,
Xianjie Wang,
Bo Li,
Lingli Zhang,
Zhe Lv,
Yu Zhang,
Yang Wang,
Jinke Tang,
Ping Xu,
Bingsheng Li,
Yanqiang Yang,
Yu Sui,
Bo Song
Publication year - 2016
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.023755
Subject(s) - ultraviolet , materials science , optoelectronics , schottky diode , schottky barrier , optics , electric field , photovoltaic effect , photoelectric effect , relaxation (psychology) , photovoltaic system , diode , physics , electrical engineering , psychology , social psychology , quantum mechanics , engineering
In this paper, we report a sensitive lateral photovoltaic effect (LPE) in Fe 3 O 4 /3C-SiC Schottky junctions with a fast relaxation time at near-ultraviolet wavelengths. The rectifying behavior suggests that the large build-in electric field was formed in the Schottky junctions. This device has excellent position sensitivity as high as 67.8 mV mm -1 illuminated by a 405 nm laser. The optical relaxation time of the LPE is about 30 μs. The fast relaxation and high positional sensitivity of the LPE make the Fe 3 O 4 /3C-SiC junction a promising candidate for a wide range of ultraviolet/near-ultraviolet optoelectronic applications.