Near-ultraviolet lateral photovoltaic effect in Fe_3O_4/3C-SiC Schottky junctions | Zendy

Bingqian Song | Zendy; Xianjie Wang | Zendy; Bo Li | Zendy; Lingli Zhang | Zendy; Zhe Lv | Zendy; Yu Zhang | Zendy; Yang Wang | Zendy; Jinke Tang | Zendy; Ping Xu | Zendy; Bingsheng Li | Zendy; Yanqiang Yang | Zendy; Yu Sui | Zendy; Bo Song | Zendy

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Near-ultraviolet lateral photovoltaic effect in Fe_3O_4/3C-SiC Schottky junctions

Author(s) -

Bingqian Song,

Xianjie Wang,

Bo Li,

Lingli Zhang,

Zhe Lv,

Yu Zhang,

Yang Wang,

Jinke Tang,

Ping Xu,

Bingsheng Li,

Yanqiang Yang,

Yu Sui,

Bo Song

Publication year - 2016

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.24.023755

Subject(s) - ultraviolet , materials science , optoelectronics , schottky diode , schottky barrier , optics , electric field , photoelectric effect , photovoltaic effect , relaxation (psychology) , photovoltaic system , diode , physics , electrical engineering , psychology , social psychology , quantum mechanics , engineering

In this paper, we report a sensitive lateral photovoltaic effect (LPE) in Fe 3 O 4 /3C-SiC Schottky junctions with a fast relaxation time at near-ultraviolet wavelengths. The rectifying behavior suggests that the large build-in electric field was formed in the Schottky junctions. This device has excellent position sensitivity as high as 67.8 mV mm -1 illuminated by a 405 nm laser. The optical relaxation time of the LPE is about 30 μs. The fast relaxation and high positional sensitivity of the LPE make the Fe 3 O 4 /3C-SiC junction a promising candidate for a wide range of ultraviolet/near-ultraviolet optoelectronic applications.

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