Open AccessHigh-responsivity sub-bandgap hot-hole plasmonic Schottky detectors
Author(s) -
Mohammad Alavirad,
Anthony Olivieri,
Langis Roy,
Pierre Berini
Publication year - 2016
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.022544
Subject(s) - responsivity , materials science , optoelectronics , optics , photodetector , surface plasmon , plasmon , surface plasmon polariton , silicon , band gap , photocurrent , grating , physics
In this paper we present a sub-bandgap photodetector consisting of a metal grating on a thin metal patch on silicon, which makes use of the enhancement produced by the excitation of surface plasmon polaritons at the metal-silicon interface. The grating is defined via e-beam lithography and Au lift-off on a Au patch defined beforehand by optical lithography on doped p-type silicon. The surface plasmon polaritons are absorbed by the metal, leading to the creation of hot holes that can cross into the silicon where they are collected as the photocurrent. Physical characterization of intermediate structure is provided along with responsivity measurements at telecom wavelengths. Results are promising in terms of responsivity, with a value of 13 mA/W measured at 1550 nm - this is among the highest values reported to date for sub-bandgap detectors based on internal photoemission. The Schottky photodetector can be used in, e.g., non-contact wafer probing or in short-reach optical communications applications.