Open AccessHigh performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes
Author(s) -
Nicholas Martinez,
Christopher T. DeRose,
Reinhard W Brock,
Andrew Starbuck,
Andrew Pomerene,
Anthony L. Lentine,
Douglas C. Trotter,
Paul Davids
Publication year - 2016
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.019072
Subject(s) - avalanche photodiode , photodiode , optoelectronics , optics , materials science , waveguide , photonics , avalanche diode , physics , breakdown voltage , voltage , detector , quantum mechanics
We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10 -12 , in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.