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Experimental verification of epsilon-near-zero plasmon polariton modes in degenerately doped semiconductor nanolayers
Author(s) -
Salvatore Campione,
Iltai Kim,
Domenico de Ceglia,
Gordon Arthur Keeler,
Ting S. Luk
Publication year - 2016
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.018782
Subject(s) - polariton , materials science , optics , plasmon , optoelectronics , doping , semiconductor , ultrashort pulse , radiative transfer , indium tin oxide , refractive index , surface plasmon polariton , surface plasmon , thin film , physics , laser , nanotechnology
We investigate optical polariton modes supported by subwavelength-thick degenerately doped semiconductor nanolayers (e.g. indium tin oxide) on glass in the epsilon-near-zero (ENZ) regime. The dispersions of the radiative (R, on the left of the light line) and non-radiative (NR, on the right of the light line) ENZ polariton modes are experimentally measured and theoretically analyzed through the transfer matrix method and the complex-frequency/real-wavenumber analysis, which are in remarkable agreement. We observe directional near-perfect absorption using the Kretschmann geometry for incidence conditions close to the NR-ENZ polariton mode dispersion. Along with field enhancement, this provides us with an unexplored pathway to enhance nonlinear optical processes and to open up directions for ultrafast, tunable thermal emission.

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