Open AccessHigh luminous efficacy green light-emitting diodes with AlGaN cap layer
Author(s) -
Abdullah I. Alhassan,
Robert M. Farrell,
Burhan K. SaifAddin,
Asad J. Mughal,
Feng Wu,
Steven P. DenBaars,
Shuji Nakamura,
James S. Speck
Publication year - 2016
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.017868
Subject(s) - luminous efficacy , luminous flux , materials science , quantum efficiency , optoelectronics , light emitting diode , chemical vapor deposition , diode , green light , sapphire , optics , wavelength , luminous intensity , layer (electronics) , laser , physics , nanotechnology , blue light , light source
We demonstrate very high luminous efficacy green light-emitting diodes employing Al 0.30 Ga 0.70 N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm 2 ) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.