High luminous efficacy green light-emitting diodes with AlGaN cap layer | Zendy

Abdullah I. Alhassan | Zendy; Robert M. Farrell | Zendy; Burhan K. SaifAddin | Zendy; Asad J. Mughal | Zendy; Feng Wu | Zendy; Steven P. DenBaars | Zendy; Shuji Nakamura | Zendy; James S. Speck | Zendy

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High luminous efficacy green light-emitting diodes with AlGaN cap layer

Author(s) -

Abdullah I. Alhassan,

Robert M. Farrell,

Burhan K. SaifAddin,

Asad J. Mughal,

Feng Wu,

Steven P. DenBaars,

Shuji Nakamura,

James S. Speck

Publication year - 2016

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.24.017868

Subject(s) - luminous efficacy , materials science , luminous flux , optoelectronics , quantum efficiency , chemical vapor deposition , light emitting diode , diode , green light , sapphire , optics , wavelength , layer (electronics) , luminous intensity , laser , nanotechnology , physics , light source , blue light

We demonstrate very high luminous efficacy green light-emitting diodes employing Al 0.30 Ga 0.70 N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm 2 ) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.

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