Open AccessQuantitative temperature measurement of multi-layered semiconductor devices using spectroscopic thermoreflectance microscopy
Author(s) -
Dong Uk Kim,
Kwan Seob Park,
Chan Bae Jeong,
Geon Hee Kim,
Ki Soo Chang
Publication year - 2016
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.013906
Subject(s) - materials science , microelectronics , semiconductor , optoelectronics , temperature measurement , microscopy , calibration , silicon , optics , temperature coefficient , resistor , optical microscope , scanning electron microscope , statistics , physics , mathematics , quantum mechanics , voltage , composite material
Thermoreflectance microscopy is essential in understanding the unpredictable local heating generation that occurs during microelectronic device operation. However, temperature measurements of multi-layered semiconductor devices represent a challenge because the thermoreflectance coefficient is quite small and is dramatically changed by the optical interference inside transparent layers of the device. Therefore, we propose a spectroscopic thermoreflectance microscopy system using a systematic approach for improving the quantitative temperature measurement of multi-layered semiconductor devices. We demonstrate the quantitative measurement of the temperature profile for physical defects on thin-film polycrystalline silicon resistors via thermoreflectance coefficient calibration and effective coefficient κ estimation.