Quantitative temperature measurement of multi-layered semiconductor devices using spectroscopic thermoreflectance microscopy | Zendy

Dong Uk Kim | Zendy; Kwan Seob Park | Zendy; Chan Bae Jeong | Zendy; GeonHee Kim | Zendy; Ki Soo Chang | Zendy

Open Access

Quantitative temperature measurement of multi-layered semiconductor devices using spectroscopic thermoreflectance microscopy

Author(s) -

Dong Uk Kim,

Kwan Seob Park,

Chan Bae Jeong,

GeonHee Kim,

Ki Soo Chang

Publication year - 2016

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.24.013906

Subject(s) - materials science , microelectronics , semiconductor , optoelectronics , temperature measurement , microscopy , calibration , silicon , optics , temperature coefficient , resistor , optical microscope , scanning electron microscope , statistics , physics , mathematics , quantum mechanics , voltage , composite material

Thermoreflectance microscopy is essential in understanding the unpredictable local heating generation that occurs during microelectronic device operation. However, temperature measurements of multi-layered semiconductor devices represent a challenge because the thermoreflectance coefficient is quite small and is dramatically changed by the optical interference inside transparent layers of the device. Therefore, we propose a spectroscopic thermoreflectance microscopy system using a systematic approach for improving the quantitative temperature measurement of multi-layered semiconductor devices. We demonstrate the quantitative measurement of the temperature profile for physical defects on thin-film polycrystalline silicon resistors via thermoreflectance coefficient calibration and effective coefficient κ estimation.

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