Open AccessEmission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes
Author(s) -
Jing Yang,
Degang Zhao,
Desheng Jiang,
P. Chen,
Z. S. Liu,
Jianjun Zhu,
X. J. Li,
Xiaoliang He,
J. P. Liu,
Lingqian Zhang,
Hui Yang,
Y. T. Zhang,
Guotong Du
Publication year - 2016
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.013824
Subject(s) - materials science , electroluminescence , optoelectronics , light emitting diode , quantum efficiency , torr , indium gallium nitride , spontaneous emission , impurity , quantum well , diode , carbon fibers , optics , emission intensity , gallium nitride , photoluminescence , laser , chemistry , nanotechnology , physics , organic chemistry , layer (electronics) , composite number , composite material , thermodynamics
A series of samples with varying growth pressure are grown and their optical and structural properties are investigated. It is found that the residual carbon concentration decreases when the reactor pressure increases from 80 to 450 Torr during the InGaN/GaN multiple quantum well growth. It results in an enhanced peak intensity of electroluminescence because carbon impurities can induce deep energy levels and act as non-radiative recombination centers in InGaN layers.