Open AccessInGaN light emitting diodes with a nanopipe layer formed from the GaN epitaxial layer
Author(s) -
Wei-Ju Hsu,
Kuei-Ting Chen,
Wan-Chun Huang,
C. Wu,
Jing−Jie Dai,
Sy-Hann Chen,
Chia−Feng Lin
Publication year - 2016
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.011601
Subject(s) - materials science , optoelectronics , light emitting diode , epitaxy , layer (electronics) , etching (microfabrication) , diode , optics , quantum efficiency , laser , gallium nitride , wide bandgap semiconductor , refractive index , nanotechnology , physics
A Si-heavy doped GaN:Si epitaxial layer is transformed into a directional nanopipe GaN layer through a laser-scribing process and a selectively electrochemical (EC) etching process. InGaN light-emitting diodes (LEDs) with an EC-treated nanopipe GaN layer have a high light extraction efficiency. The direction of the nanopipe structure was directed perpendicular to the laser scribing line and was guided by an external bias electric field. An InGaN LED structure with an embedded nanopipe GaN layer can enhance external quantum efficiency through a one-step epitaxial growth process and a selective EC etching process. A birefringence optical property and a low effective refractive index were observed in the directional-nanopipe GaN layer.