Open AccessOptical net gain measurement in n-type doped germanium waveguides under optical pumping for silicon monolithic laser
Author(s) -
Tadashi Okumura,
Katsuya Oda,
Junichi Kasai,
M. Sagawa,
Yuji Suwa
Publication year - 2016
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.009132
Subject(s) - materials science , net gain , germanium , optoelectronics , lasing threshold , laser , silicon photonics , silicon , optics , doping , photonic integrated circuit , semiconductor laser theory , waveguide , photonics , semiconductor , cmos , amplifier , physics , wavelength
Silicon (Si) monolithic lasers are key devices in large-scale, high-density photonic integrated circuits. Germanium (Ge) is promising as an active layer due to the complementary metal-oxide semiconductor process compatibility with Si. A net optical gain from Ge is essential to demonstrate lasing operation. We fabricated Ge waveguides and investigated the n-type doping effect on the net optical gain. The estimated net gain of the n-Ge waveguide increased from -2200 to -500/cm, namely reducing loss, under optically pumped condition.