Open AccessPhotocarrier transport and dynamics in mixed-phase BiFeO_3 films
Author(s) -
Li Pan,
Xianglei Dong,
Yuqiang Gao,
Lixia Ren,
Jin Kusaka
Publication year - 2016
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.009119
Subject(s) - materials science , phase (matter) , multiferroics , condensed matter physics , electric field , relaxation (psychology) , photoelectric effect , band gap , thin film , photocurrent , optics , oxide , optoelectronics , nanotechnology , dielectric , ferroelectricity , physics , psychology , social psychology , quantum mechanics , metallurgy
We report a remarkable photoinduced relaxation process and its dependence of thickness and temperature in mixed-phase BiFeO 3 films grown on (001) LaAlO 3 substrates. When the films are illuminated by the light above the bandgap, their resistances are reduced with the increase of temperature. The photoinduced change of resistance reaches to the maximum of about 2.17 × 10 5% at 300 K. It is noted that the relaxation processes of the resistance are significantly different between T-like phase and T-R mixed phase due to structural strain, symmetry breaking and built-in electric field at the phase boundaries. These results provide more insights into intrinsic mechanisms of mixed-phase multiferroic materials and potential applications in all-oxide photoelectric devices.