Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact | Zendy

Benjamin P. Yonkee | Zendy; Erin C. Young | Zendy; Changmin Lee | Zendy; John T. Leonard | Zendy; Steven P. DenBaars | Zendy; James S. Speck | Zendy; Shuji Nakamura | Zendy

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Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact

Author(s) -

Benjamin P. Yonkee,

Erin C. Young,

Changmin Lee,

John T. Leonard,

Steven P. DenBaars,

James S. Speck,

Shuji Nakamura

Publication year - 2016

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.24.007816

Subject(s) - materials science , metalorganic vapour phase epitaxy , chemical vapor deposition , optoelectronics , molecular beam epitaxy , diode , laser , substrate (aquarium) , light emitting diode , nitride , current density , tunnel junction , semiconductor laser theory , optics , epitaxy , layer (electronics) , nanotechnology , quantum tunnelling , physics , oceanography , quantum mechanics , geology

We demonstrate a III-nitride edge emitting laser diode (EELD) grown on a (2021) bulk GaN substrate with a GaN tunnel junction contact for hole injection. The tunnel junction was grown using a combination of metal-organic chemical-vapor deposition (MOCVD) and ammonia-based molecular-beam epitaxy (MBE) which allowed to be regrown over activated p-GaN. For a laser bar with dimensions of 1800 µm x 2.5 µm, without facet coatings, the threshold current was 284 mA (6.3 kA/cm 2 ) and the single facet slope efficiency was 0.33 W/A (12% differential efficiency). A differential resistivity at high current density of 2.3 × 10 -4 Ω cm 2 was measured.

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