Open AccessLow lateral divergence 2 μm InGaSb/ AlGaAsSb broad-area quantum well lasers
Author(s) -
Jian Rong,
Enbo Xing,
Yu Zhang,
Lijie Wang,
Shili Shu,
Sicong Tian,
Cunzhu Tong,
XinSheng Chai,
Yingqiang Xu,
Haiqiao Ni,
Zhichuan Niu
Publication year - 2016
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.007246
Subject(s) - optics , laser , beam divergence , materials science , divergence (linguistics) , brightness , optoelectronics , quantum well , microstructure , fabrication , physics , laser beams , laser beam quality , medicine , linguistics , philosophy , alternative medicine , pathology , metallurgy
High power and high brightness mid-infrared GaSb based lasers are desired for many applications, however, the high lateral divergence is still the influence factor for practical application. In this paper, a simple and effective approach based on the fishbone-shape microstructure was proposed, the effective improvement on both the lateral divergence and output power of 2 μm GaSb based broad-area lasers was demonstrated. The lateral divergence is reduced averagely by 55% and 15.8° for 95% power content is realized. The continuous-wave emission power is increased about 19% with the decreased threshold current. The other merits for this microstructure are the unchanged intrinsic characteristic of broad-area lasers and the low cost fabrication.