Open AccessEnhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer
Author(s) -
Kwang Jae Lee,
Jaesun Chun,
SangJo Kim,
Semi Oh,
Chang-Soo Ha,
Jung Won Park,
SeungJae Lee,
J. J. Song,
Jong Hyeob Baek
Publication year - 2016
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.004391
Subject(s) - materials science , light emitting diode , optoelectronics , layer (electronics) , silicon , substrate (aquarium) , nanoporous , etching (microfabrication) , diode , wide bandgap semiconductor , nanotechnology , oceanography , geology
We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.