Open AccessUltra-compact III‒V-on-Si photonic crystal memory for flip-flop operation at 5 Gb/s
Author(s) -
D. Fitsios,
T. Alexoudi,
Alexandre Bazin,
P. Monnier,
R. Raj,
Amalia Miliou,
George T. Kanellos,
Nikos Pleros,
Fabrice Raineri
Publication year - 2016
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.004270
Subject(s) - silicon on insulator , materials science , nanolaser , flip flop , optoelectronics , optics , bistability , photonic crystal , resonator , physics , silicon , lasing threshold , cmos , wavelength
We report on a photonic crystal (PhC) nanolaser based on the heterogeneous integration of a III-V PhC nanocavity on SOI, configured to operate as a Set-Reset Flip-Flop (SR-FF). The active layer is a nanobeam cavity made of a 650 nm × 285 nm InP-based wire waveguide evanescently coupled to 500 nm × 220 nm SOI wire waveguides, demonstrating a record-low footprint of only 6.2 μm2. Injection locking enables optical bistability allowing for memory operation with only 6.4 fJ/bit switching energies and <50 ps response times. Bit-level SR-FF memory operation was evaluated at 5 Gb/s with PRBS-resembling data patterns, revealing error free operation with a negative power penalty.