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11 MW peak power in doubly QML composite Nd:YVO_4/Nd:YVO_4/Nd:YVO_4/KTP sub-nanosecond green laser with EO and Bi-GaAs
Author(s) -
Shixia Li,
Dechun Li,
Shengzhi Zhao,
Guiqiu Li,
Xiangyang Li,
Hui Qiao
Publication year - 2016
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.004022
Subject(s) - materials science , nanosecond , laser , optics , q switching , pulse duration , optoelectronics , pulse width modulation , power (physics) , physics , quantum mechanics
By simultaneously employing electro-optic (EO) modulator and Bi-doped GaAs, dual-loss-modulated Q-switched and mode-locked (QML) multi-segment composite Nd:YVO4/Nd:YVO4/Nd:YVO4/KTP sub-nanosecond green laser is demonstrated with low repetition rate and high peak power. When the incident pump power is up to 6.93 W, only one mode-locking pulse underneath a Q-switching envelope is generated with sub-nanosecond pulse duration at one kilohertz repetition rate. An average output power of 445 mW and a pulse duration of 399 ps are obtained with the incident pump power of 11.13 W, corresponding to a peak power of 1.115 MW which is the highest one in doubly QML sub-nanosecond green laser by now. The laser characteristics are better than those obtained with EO and GaAs. The experimental results indicate that Bi-GaAs is a promising saturable absorber for dual-loss-modulated QML laser.

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