Photosensitive cadmium telluride thin-film field-effect transistors | Zendy

Gwangseok Yang | Zendy; Dong Hwan Kim | Zendy; Jihyun Kim | Zendy

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Photosensitive cadmium telluride thin-film field-effect transistors

Author(s) -

Gwangseok Yang,

Dong Hwan Kim,

Jihyun Kim

Publication year - 2016

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.24.003607

Subject(s) - cadmium telluride photovoltaics , graphene , materials science , optoelectronics , sheet resistance , fabrication , thin film , electrical resistivity and conductivity , transistor , telluride , electron mobility , field effect transistor , nanotechnology , layer (electronics) , electrical engineering , metallurgy , medicine , alternative medicine , engineering , pathology , voltage

We report on the graphene-seeded growth and fabrication of photosensitive Cadmium telluride (CdTe)/graphene hybrid field-effect transistors (FETs) subjected to a post-growth activation process. CdTe thin films were selectively grown on pre-defined graphene, and their morphological, electrical and optoelectronic properties were systemically analyzed before and after the CdCl2 activation process. CdCl2-activated CdTe FETs showed p-type behavior with improved electrical features, including higher electrical conductivity (reduced sheet resistance from 1.09 × 10(9) to 5.55 × 10(7) Ω/sq.), higher mobility (from 0.025 to 0.20 cm2/(V·s)), and faster rise time (from 1.23 to 0.43 s). A post-growth activation process is essential to fabricate high-performance photosensitive CdTe/graphene hybrid devices.

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