Open AccessPhotosensitive cadmium telluride thin-film field-effect transistors
Author(s) -
Gwangseok Yang,
Dong Hwan Kim,
Jihyun Kim
Publication year - 2016
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.003607
Subject(s) - cadmium telluride photovoltaics , graphene , materials science , optoelectronics , sheet resistance , fabrication , thin film , electrical resistivity and conductivity , transistor , telluride , electron mobility , field effect transistor , nanotechnology , layer (electronics) , electrical engineering , metallurgy , medicine , alternative medicine , engineering , pathology , voltage
We report on the graphene-seeded growth and fabrication of photosensitive Cadmium telluride (CdTe)/graphene hybrid field-effect transistors (FETs) subjected to a post-growth activation process. CdTe thin films were selectively grown on pre-defined graphene, and their morphological, electrical and optoelectronic properties were systemically analyzed before and after the CdCl2 activation process. CdCl2-activated CdTe FETs showed p-type behavior with improved electrical features, including higher electrical conductivity (reduced sheet resistance from 1.09 × 10(9) to 5.55 × 10(7) Ω/sq.), higher mobility (from 0.025 to 0.20 cm2/(V·s)), and faster rise time (from 1.23 to 0.43 s). A post-growth activation process is essential to fabricate high-performance photosensitive CdTe/graphene hybrid devices.