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OWC using a monolithically integrated 200 µm APD OEIC in 035 µm BiCMOS technology
Author(s) -
Dinka Milovančev,
Tomislav Jukić,
Paul Brandl,
Bernhard Steindl,
Horst Zimmermann
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.000918
Subject(s) - avalanche photodiode , transimpedance amplifier , photodiode , optics , collimated light , optical wireless , amplifier , bicmos , physics , optoelectronics , transmitter , materials science , wireless , cmos , differential amplifier , telecommunications , laser , transistor , computer science , detector , channel (broadcasting) , quantum mechanics , voltage
A lens-less receiver with a monolithically integrated avalanche photodiode (APD) in 0.35 µm BiCMOS technology has been developed for establishing an indoor 2 Gb/s optical wireless communication (OWC) over a distance of 6.5 m with a receiving angle of 22°. Immunity toward background light was demonstrated up to 6000 lux. Four additional PIN photodiodes with highly sensitive differential nonlinear transimpedance amplifiers (TIA) were implemented on the receiver chip for centering the highly collimated transmitter beam position.

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