Efficiency of GaInAs thermophotovoltaic cells: the effects of incident radiation, light trapping and recombinations | Zendy

Pamela Jurczak | Zendy; Arthur Onno | Zendy; Kimberly Sablon | Zendy; Huiyun Liu | Zendy

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Efficiency of GaInAs thermophotovoltaic cells: the effects of incident radiation, light trapping and recombinations

Author(s) -

Pamela Jurczak,

Arthur Onno,

Kimberly Sablon,

Huiyun Liu

Publication year - 2015

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.23.0a1208

Subject(s) - thermophotovoltaic , common emitter , trapping , materials science , optics , semiconductor , optoelectronics , auger effect , radiative transfer , radiation , dislocation , auger , physics , atomic physics , ecology , composite material , biology

The radiative limit model, based on the black body theory extended to semiconductors and the flow equilibrium in the cell, has been adapted for Ga(x)In(1-x)As thermophotovoltaic devices. The impact of the thermal emitter temperature and the incident power density on the performance of cells for different Ga/In ratios has been investigated. The effects of the thickness of the cell and of light trapping have been investigated as well. A theoretical maximum efficiency of 24.2% has been calculated for a dislocation-free 5-μm-thick cell with a 0.43 eV bandgap illuminated by a source at 1800 K. The model also takes into account Auger recombinations and threading dislocations-related Shockley-Read-Hall recombinations.

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