Self-aligned growth of CdTe photodetectors using a graphene seed layer | Zendy

Gwangseok Yang | Zendy; DongHwan Kim | Zendy; Jihyun Kim | Zendy

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Self-aligned growth of CdTe photodetectors using a graphene seed layer

Author(s) -

Gwangseok Yang,

DongHwan Kim,

Jihyun Kim

Publication year - 2015

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.23.0a1081

Subject(s) - graphene , photodetector , materials science , cadmium telluride photovoltaics , optoelectronics , ohmic contact , nucleation , layer (electronics) , fabrication , semiconductor , optics , nanotechnology , physics , medicine , alternative medicine , pathology , thermodynamics

We demonstrate the self-aligned growth of CdTe photodetectors using graphene as a pre-defined seed layer. Defects were generated in the graphene prior to growth to act as CdTe nucleation sites. Self-aligned CdTe structures were grown selectively on the pre-defined graphene region. The electrical and optoelectrical properties of the photodetectors were systematically analyzed. Our CdTe devices displayed Ohmic behavior with a low sheet resistance of 1.24 × 10(8) Ω/sq. Excellent photodetecting performances were achieved, including a high on-off ratio (~2.8), fast response time (10.4 s), and highly reproducible photoresponses. The fabrication method proposed here for these self-aligned device structures proves valuable for the development of next-generation graphene-semiconductor hybrid devices.

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