Ultra-low threshold avalanche gain from solar-blind photodetector based on graded-band-gap-cubic-MgZnO | Zendy

Xiuhua Xie | Zendy; Zhenzhong Zhang | Zendy; Binghui Li | Zendy; Shuangpeng Wang | Zendy; Dezhen Shen | Zendy

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Ultra-low threshold avalanche gain from solar-blind photodetector based on graded-band-gap-cubic-MgZnO

Author(s) -

Xiuhua Xie,

Zhenzhong Zhang,

Binghui Li,

Shuangpeng Wang,

Dezhen Shen

Publication year - 2015

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.23.032329

Subject(s) - responsivity , photodetector , materials science , optoelectronics , heterojunction , band gap , optics , biasing , electron , voltage , physics , quantum mechanics

A larger ratio of conduction-band offset to valence-band offset is the unique character for Mg(x)Zn(1-x)O alloys. For this reason, it is feasible to build a quasi-electric forces, caused by the spatial gradient of the conduction edge, exerting on the electrons. In this paper, a novel graded band gap cubic-MgZnO-based solar-blind photodetector is successfully fabricated from Graded-Band-Gap-Cubic-MgZnO/i-MgO/p-Si heterojunction, via changing stoichiometry spatial gradient. Due to quasi-electric fields in non-uniform MgZnO, the multiple carriers are generated under ultra-low threshold bias voltage. The photodetector showed high performance, namely, high responsivity, quantum efficiency, high sensitivity and selectivity towards the solar-blind spectrum, and fast response times.

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