Open AccessZero-coupling-gap degenerate band edge resonators in silicon photonics
Author(s) -
Justin R. Burr,
Ronald M. Reano
Publication year - 2015
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.030933
Subject(s) - resonator , optics , waveguide , physics , photonic crystal , photonics , coupling (piping) , coupling coefficient of resonators , miniaturization , degenerate energy levels , silicon photonics , photonic integrated circuit , q factor , resonance (particle physics) , optoelectronics , materials science , quantum mechanics , metallurgy , nanotechnology , particle physics
Resonances near regular photonic band edges are limited by quality factors that scale only to the third power of the number of periods. In contrast, resonances near degenerate photonic band edges can scale to the fifth power of the number periods, yielding a route to significant device miniaturization. For applications in silicon integrated photonics, we present the design and analysis of zero-coupling-gap degenerate band edge resonators. Complex band diagrams are computed for the unit cell with periodic boundary conditions that convey characteristics of propagating and evanescent modes. Dispersion features of the band diagram are used to describe changes in resonance scaling in finite length resonators. Resonators with non-zero and zero coupling gap are compared. Analysis of quality factor and resonance frequency indicates significant reduction in the number of periods required to observe fifth power scaling when degenerate band edge resonators are realized with zero-coupling-gap. High transmission is achieved by optimizing the waveguide feed to the resonator. Compact band edge cavities with large optical field distribution are envisioned for light emitters, switches, and sensors.